P1203BV n-channel enhancement mode mosfet product summary v (br)dss sop- 08 absolute maximum ratings (t a = 25 c unless otherwise noted) thermal resistance ratings units 1 pulse width limited by maximum junction temperature. 2 limited only by maximum temperature allowed a mj 30 40 28 symbol i d i dm 1 2.5 w thermal resistance r q jc typical units 40 7 11 20 continuous drain current 2 v gs v ds limits v t a = 25 c operating junction & storage temperature range t a = 100 c power dissipation junction-to-ambient maximum r ds(on) t a = 100 c parameters/test conditions drain-source voltage gate-source voltage i d 12m @v gs = 10v 11a avalanche energy l = 0.1mh pulsed drain current 1 , 2 t a = 25 c avalanche current 30v c -55 to 150 50 i as e as symbol p d t j , t stg junction-to-case 25 r q ja c / w ver 1.0 1 2012/4/13 http://www..net/ datasheet pdf - http://www..net/
P1203BV n-channel enhancement mode mosfet electrical characteristics (t j = 25 c, unless otherwise noted) min typ max 30 1 1.8 3 100 na 1 10 70 a 14 17.5 8.5 12 40 s 846 225 126 1.65 17 2.7 4 9 40 20 6 1.9 a 1.3 v 21 ns 10 nc 1 pulse test : pulse width ? 300 m sec, duty cycle ? 2 . 2 independent of operating temperature. v gs = 0v, v ds = 0v, f = 1mhz zero gate voltage drain current forward transconductance 1 g fs v ds = 5v, i d = 10a dynamic input capacitance c iss m a i dss v ds = 20v, v gs = 0v , t j = 125 c v gs = 0v, v ds = 20v, f = 1mhz pf m output capacitance c oss v ds = v gs , i d = 250 m a v ds = 0v, v gs = 20v static gate-body leakage gate threshold voltage i gss v gs = 0v, i d = 250 m a v (br)dss v ds = 24v, v gs = 0v test conditions v limits unit drain-source breakdown voltage v gs(th) reverse transfer capacitance c rss total gate charge 2 q g parameter symbol gate resistance r g on-state drain current 1 i d(on) v ds = 0.5v (br)dss , i d = 8.8a, v gs = 10v nc gate-source charge 2 q gs gate-drain charge 2 q gd v dd = 15v, i d = 12.5a, v gs = 10v, r g =6 ns rise time 2 t r turn-off delay time 2 t d(off) fall time 2 t f reverse recovery time t rr i f = 11 a, dl f /dt = 100a / m s reverse recovery charge q rr source-drain diode ratings and characteristics (t j = 25 c) continuous current i s v ds = 10v, v gs = 10v drain-source on-state resistance 1 v gs = 10v, i d = 11a r ds(on) v gs = 4.5v, i d = 11a forward voltage 1 v sd i f = 25a, v gs = 0v turn-on delay time 2 t d(on) ver 1.0 2 2012/4/13 http://www..net/ datasheet pdf - http://www..net/
P1203BV n-channel enhancement mode mosfet ver 1.0 3 2012/4/13 http://www..net/ datasheet pdf - http://www..net/
P1203BV n-channel enhancement mode mosfet ver 1.0 4 2012/4/13 http://www..net/ datasheet pdf - http://www..net/
P1203BV n-channel enhancement mode mosfet ver 1.0 5 2012/4/13 http://www..net/ datasheet pdf - http://www..net/
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